200-1100nm Ultra Broadband T50:R50 Dielectric UV-VIS-NIR Plate Beamsplitter

200-1100nm Ultra Broadband T50:R50 Dielectric UV-VIS-NIR Plate Beamsplitter  is a beamsplitter which transmit 50% and reflect 50% within 200-1100nm range. Coligh manufactures and customs ultra broadband beamsplitter plate according to client’s project requirement.

200-1100nm Ultra Broadband T50:R50 Dielectric UV-VIS-NIR Plate Beamsplitter Overview

200-1100nm Ultra Broadband T50:R50 Dielectric UV-VIS-NIR Plate Beamsplitter is an optical component capable of achieving a 50% transmission and 50% reflection ratio across a spectral range spanning the ultraviolet, visible, and near-infrared bands.

Coligh is a manufacturer of ultra-broadband beamsplitters, offering custom solutions with various splitting ratios to meet specific client requirements. Utilizing UV-grade fused silica substrates, we tailor each unit according to the specified angle of incidence and splitting ratio. The beamsplitters feature a functional beamsplitting coating on one side and an anti-reflective (AR) coating on the other to minimize ghosting and stray light. These components are ideally suited for a wide range of industrial applications, including multi-band spectral analysis, multispectral imaging, laser diagnostics, and optical inspection.

200-1100nm Ultra Broadband T50:R50 Dielectric UV-VIS-NIR Plate Beamsplitter Key Features

It features the following core characteristics:

  • An ultra-wideband range covering 200–1100 nm, encompassing the ultraviolet, visible, and near-infrared spectral bands.
  • A T50:R50 dielectric coating design that ensures 50% transmission and 50% reflection across the 200–1100 nm range.
  • The use of hard dielectric multilayer coatings and a UV-grade fused silica substrate makes the beamsplitter exceptionally durable.
  • We offer customization options for various dimensions and angles of incidence.

The spectrum Curve Of 200-1100nm Ultra Broadband T50:R50 Dielectric UV-VIS-NIR Plate Beamsplitter

Ultra Broad 200 1100nm T50 R50 Dielectric UV VIS NIR fused slica Plate Beamsplitter -

200-1100nm Ultra Broadband T50:R50 Dielectric UV-VIS-NIR Plate Beamsplitter Technical Specifcation

  • Beamsplitter wavelength: 200-1100nm
  • Transmission and reflection: 50:50+/-10%
  • Material: Fused silica
  • Angle of incidence: 45deg
  • AR coating: Back side
  • Thin film coating: Dielectric hard coating

Other Non-polarizing Plate Beamsplitter UV-NIR In Stock List:

Customization Capability of Broadband Beamsplitter

200-1100nm Ultra Broadband T50:R50 Dielectric UV-VIS-NIR Plate Beamsplitter Applications

Spectrophotometer Reference Beamsplitter

Spectrophotometers require the division of a light source into a sample channel and a reference channel. A 200–1100 nm ultra-wideband T50:R50 plate beamsplitter covers the ultraviolet (UV), visible, and near-infrared (NIR) ranges simultaneously. By using a single optical element for broadband beam splitting, the optical path of the spectrophotometer can be significantly simplified.

Deuterium-Halogen Light Source Beamsplitter

A deuterium lamp covers the UV range, while a halogen lamp covers the visible to near-infrared range; together, they form a broadband light source. Using a narrowband beamsplitter would otherwise necessitate the use of multiple switchable components or a complex optical path. A 200–1100 nm ultra-wideband beamsplitter, however, allows for the splitting of the combined light from both deuterium and halogen lamps within a single optical path.

Broadband Beamsplitter for Silicon Detectors

Silicon detectors typically respond to light ranging from the visible to the near-infrared, with some UV-enhanced versions extending their range into the ultraviolet. A 200–1100 nm ultra-wideband beamsplitter can be paired with a silicon detector to split broadband light—directing a portion to the detector and the remainder to a reference or imaging channel—or to facilitate monitoring via dual detectors. The T50:R50 configuration provides a balanced split ratio, making it ideal for systems that require the simultaneous acquisition of both transmitted and reflected signals.

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